GP2M023A050N
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 23A TO3PN
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Technical Details
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 347W Tc
FET Type N-Channel
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 220mOhm @ 11.5A, 10V
Physical
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Alternative Model
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