GP2M010A065H
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 9.5A TO220
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 198W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 820mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
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