GP2M005A060HG
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 4.2A TO220
PDF
/
Inventory: 9826
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 98.4W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 658pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Alternative Model
Recommended For You
GP2M005A060HG+price,GP2M005A060HG+datasheet,GP2M005A060HG+in stock,buy+GP2M005A060HG,finder+GP2M005A060HG,GP2M005A060HG+tutorials,GP2M005A060HG+download