Drain to Source Resistance 390mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 25 ns
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) 20V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 700mW
Subcategory Other Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)