FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 0.7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 700mA
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 45V
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 700mA Ta
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 800m Ω @ 700mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ