TT8U2TCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.4A TSST8
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
FET Feature Schottky Diode (Isolated)
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.105Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.4A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 45 ns
Vgs (Max) ±10V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 105m Ω @ 2.4A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 9 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.25W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 8
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn/Cu)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e2
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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