SCT3080ALGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 30A TO247
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Buying Options
Total Price: USD $10.53
Unit Price: USD $10.5336
≥1 USD $10.5336
≥10 USD $8.40987
≥100 USD $7.52459
≥500 USD $6.639345
≥1000 USD $5.975402
Inventory: 1182
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON CARBIDE
Technical
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 134W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 571pF @ 500V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 18V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.104Ohm
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 650V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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