SCT3060ALGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NCH 650V 39A TO247N
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Buying Options
Total Price: USD $22.82
Unit Price: USD $22.8209
≥1 USD $22.8209
≥10 USD $18.72545
≥100 USD $18.14025
≥500 USD $17.55505
≥1000 USD $16.96985
Inventory: 43
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Technical
Operating Temperature 175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 165W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 165W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 13A, 18V
Vgs(th) (Max) @ Id 5.6V @ 6.67mA
Input Capacitance (Ciss) (Max) @ Vds 852pF @ 500V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 39A
Threshold Voltage 2.7V
Drain-source On Resistance-Max 0.078Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 97A
Max Junction Temperature (Tj) 175°C
Dimensions
Height 25.5mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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