Operating Temperature 175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 262W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 20A, 18V
Vgs(th) (Max) @ Id 5.6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1337pF @ 800V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 18V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Continuous Drain Current (ID) 55A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 137A
DS Breakdown Voltage-Min 1200V