SCT2750NYTB
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
1700V .75 OHM 6A SIC FET
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Buying Options
Total Price: USD $9.61
Unit Price: USD $9.60667
≥1 USD $9.60667
≥10 USD $9.062904
≥100 USD $8.549908
≥500 USD $8.065954
≥1000 USD $7.60939
Inventory: 1101
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Surface Mount YES
Technical
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 975m Ω @ 1.7A, 18V
Vgs(th) (Max) @ Id 4V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 800V
Current - Continuous Drain (Id) @ 25°C 5.9A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 18V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Drain Current-Max (Abs) (ID) 5.9A
Drain-source On Resistance-Max 0.975Ohm
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 1700V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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