Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 47 ns
Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Rds On (Max) @ Id, Vgs 364m Ω @ 4A, 18V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 108W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 175°C TJ