Operating Temperature 175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 262W Tc
Element Configuration Single
Output Configuration High Side
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 800V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 18V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 80A