Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Turn-Off Delay Time 350 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -12V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 36m Ω @ 3.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ