RW1C025ZPT2CR
RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.5A WEMT6
PDF
/
Buying Options
Total Price: USD $11.25
Unit Price: USD $11.24895
≥1 USD $11.24895
≥10 USD $9.2302
≥100 USD $8.9414
≥500 USD $8.6526
≥1000 USD $8.36475
Inventory: 8003
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 10V
DS Breakdown Voltage-Min 20V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
RW1C025ZPT2CR+price,RW1C025ZPT2CR+datasheet,RW1C025ZPT2CR+in stock,buy+RW1C025ZPT2CR,finder+RW1C025ZPT2CR,RW1C025ZPT2CR+tutorials,RW1C025ZPT2CR+download