Drain to Source Resistance 44mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) 2.5A
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) 12V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 400mW
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)