Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.046Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ