RUM001L02T2CL
RoHS 
RoHS compliant
RoHS compliantPackage SOT-723
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 0.1A VMT3
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Buying Options
Total Price: USD $0.1
Unit Price: USD $0.09629
≥1 USD $0.09629
≥500 USD $0.0708
≥1000 USD $0.059
≥2000 USD $0.05413
≥5000 USD $0.05059
Inventory: 23398
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels 1
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 4.2Ohm
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 550μm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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