DS Breakdown Voltage-Min 20V
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 105m Ω @ 2A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 320mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ