RT1C060UNTR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 6A TSST8
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Buying Options
Total Price: USD $0.21
Unit Price: USD $0.2147
≥1 USD $0.2147
≥10 USD $0.1767
≥100 USD $0.171
≥500 USD $0.1653
≥1000 USD $0.16055
Inventory: 993
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2010
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 650mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.033Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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