Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 14m Ω @ 9A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ