Drain to Source Breakdown Voltage 60V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 37m Ω @ 6.5A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ