Pulsed Drain Current-Max (IDM) 26A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.042Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 31 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 26m Ω @ 6.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ