DS Breakdown Voltage-Min 45V
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 45V
Gate Charge (Qg) (Max) @ Vgs 93.4nC @ 5V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 91m Ω @ 8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 15W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn98Cu2)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ