Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.205Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 20A
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 190m Ω @ 5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 15W Tc
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn98Cu2)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ