Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23.5m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ
Avalanche Energy Rating (Eas) 4.2 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 30A
Continuous Drain Current (ID) -7.5A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 15V