RS1L180GNTB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RS1L180GN IS LOW ON - RESISTANCE
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Buying Options
Total Price: USD $4.44
Unit Price: USD $4.444982
≥1 USD $4.444982
≥10 USD $4.193372
≥100 USD $3.956018
≥500 USD $3.732085
≥1000 USD $3.52084
Inventory: 1187
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 50 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 72A
Drain-source On Resistance-Max 0.0085Ohm
Drain Current-Max (Abs) (ID) 18A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 68A Tc
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 30V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Rds On (Max) @ Id, Vgs 5.6m Ω @ 18A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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