RS1E350GNTB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
4.5V DRIVE NCH MOSFET. POWER MOS
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Buying Options
Total Price: USD $2.27
Unit Price: USD $2.2704
≥1 USD $2.2704
≥10 USD $1.8832
≥100 USD $1.499168
≥500 USD $1.268538
≥1000 USD $1.076337
Inventory: 1105
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 140A
Drain-source On Resistance-Max 0.002Ohm
Drain Current-Max (Abs) (ID) 35A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Ta 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4060pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.7m Ω @ 35A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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