RS1E321GNTB1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RS1E321GN IS A POWER MOSFET WITH
PDF
/
Buying Options
Total Price: USD $2.04
Unit Price: USD $2.0416
≥1 USD $2.0416
≥10 USD $1.69224
≥100 USD $1.346664
≥500 USD $1.139494
≥1000 USD $0.966838
Inventory: 1136
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 42.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.0029Ohm
Pulsed Drain Current-Max (IDM) 128A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 77 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
RS1E321GNTB1+price,RS1E321GNTB1+datasheet,RS1E321GNTB1+in stock,buy+RS1E321GNTB1,finder+RS1E321GNTB1,RS1E321GNTB1+tutorials,RS1E321GNTB1+download