Drain to Source Resistance 1.7mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 70.5 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 30V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)