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RS1E240BNTB

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 24A 8HSOP
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Buying Options
Total Price: USD $0.63
Unit Price: USD $0.6336
≥1 USD $0.6336
≥10 USD $0.5456
≥100 USD $0.37796
≥500 USD $0.315814
≥1000 USD $0.26877
Inventory: 1080
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 24A
Drain-source On Resistance-Max 0.0046Ohm
Pulsed Drain Current-Max (IDM) 96A
DS Breakdown Voltage-Min 30V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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