DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 60A
Drain-source On Resistance-Max 0.0114Ohm
Drain Current-Max (Abs) (ID) 15A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 8.8m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta 22.9W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ