DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0154Ohm
Drain Current-Max (Abs) (ID) 9A
Continuous Drain Current (ID) 9A
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 15.4m Ω @ 9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 650mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ