Avalanche Energy Rating (Eas) 22 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 22A
Drain-source On Resistance-Max 0.0361Ohm
Drain Current-Max (Abs) (ID) 5.5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 18.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 24.5m Ω @ 5.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ