Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 35m Ω @ 4.5A, 10V
Power Dissipation-Max 950mW Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ