RQ3E180AJTB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 18A HSMR8
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6864
≥1 USD $0.6864
≥10 USD $0.5632
≥100 USD $0.43824
≥500 USD $0.371448
≥1000 USD $0.3674
Inventory: 1334
Minimum: 1
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Technical Details
Technical
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 30A
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 24.6 mJ
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 18A Ta 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 15V
Vgs(th) (Max) @ Id 1.5V @ 11mA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 30W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2015
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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