RQ3E100MNTB1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10A HSMT8
PDF
/
Buying Options
Total Price: USD $0.42
Unit Price: USD $0.418554
≥1 USD $0.418554
≥10 USD $0.398631
≥100 USD $0.38023
Inventory: 1151
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.3m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 9.9nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
RQ3E100MNTB1+price,RQ3E100MNTB1+datasheet,RQ3E100MNTB1+in stock,buy+RQ3E100MNTB1,finder+RQ3E100MNTB1,RQ3E100MNTB1+tutorials,RQ3E100MNTB1+download