RQ3E075ATTB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CHANNEL 30V 18A 8HSMT
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Buying Options
Total Price: USD $0.73
Unit Price: USD $0.7304
≥1 USD $0.7304
≥10 USD $0.59928
≥100 USD $0.465784
≥500 USD $0.394803
≥1000 USD $0.3905
Inventory: 1173
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 20 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 30A
Drain-source On Resistance-Max 0.033Ohm
Drain Current-Max (Abs) (ID) 7.5A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 23m Ω @ 7.5A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 15W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2017
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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