RQ3C150BCTB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CHANNEL 20V 30A 8HSMT
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Buying Options
Total Price: USD $1.01
Unit Price: USD $1.012
≥1 USD $1.012
≥10 USD $0.82544
≥100 USD $0.642048
≥500 USD $0.544227
≥1000 USD $0.443335
Inventory: 6403
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 20W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.0085Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 33 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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