RP1L080SNTR
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 8A MPT6
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 32A
Drain-source On Resistance-Max 0.028Ohm
Drain Current-Max (Abs) (ID) 8A
Continuous Drain Current (ID) 8A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 24m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F6
Pin Count 6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case 6-SMD, Flat Leads
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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