RJ1G12BGNTLL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RJ1G12BGN IS A POWER MOSFET WITH
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Buying Options
Total Price: USD $4.09
Unit Price: USD $4.092
≥1 USD $4.092
≥10 USD $3.43288
≥100 USD $2.77728
≥500 USD $2.468734
Inventory: 1121
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 117 mJ
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 240A
Drain-source On Resistance-Max 0.00208Ohm
Drain Current-Max (Abs) (ID) 120A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 12500pF @ 20V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Rds On (Max) @ Id, Vgs 1.86m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 178W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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