RF4L055GNTCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerUDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RF4L055GN IS A POWER MOSFET WITH
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Buying Options
Total Price: USD $0.76
Unit Price: USD $0.7568
≥1 USD $0.7568
≥10 USD $0.61952
≥100 USD $0.481536
≥500 USD $0.408179
≥1000 USD $0.332499
Inventory: 1154
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerUDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 30V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.066Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 9.5 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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