RF4E080BNTR
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerUDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8A 8-HUML
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Buying Options
Total Price: USD $0.62
Unit Price: USD $0.6248
≥1 USD $0.6248
≥10 USD $0.54296
≥100 USD $0.375936
≥500 USD $0.314142
≥1000 USD $0.267353
Inventory: 1120
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 32A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0246Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 10ns
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 17.6m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta
Number of Channels 1
Number of Elements 1
JESD-30 Code S-PDSO-N6
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerUDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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