Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.03Ohm
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 16.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 21.4m Ω @ 7A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ