RF4E060AJTCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerUDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RF4E060AJ IS LOW ON-RESISTANCE A
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5368
≥1 USD $0.5368
≥10 USD $0.46464
≥100 USD $0.321992
≥500 USD $0.269016
≥1000 USD $0.228958
Inventory: 1101
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerUDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.037Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 3 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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