DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 20A
Continuous Drain Current (ID) 10A
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 26m Ω @ 5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ