RDR005N25TL
RoHS 
RoHS compliant
RoHS compliantPackage SC-96
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 0.5A SC-96-3
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.5808
≥1 USD $0.5808
≥10 USD $0.50512
≥100 USD $0.349976
≥500 USD $0.292406
≥1000 USD $0.248864
Inventory: 3624
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 99 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 96
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3/e2
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G3
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain-source On Resistance-Max 9.6Ohm
Drain to Source Breakdown Voltage 250V
Dimensions
Height 950μm
Length 3mm
Width 1.8mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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