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RDN150N20FU6

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 15A TO-220FN
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Drain to Source Breakdown Voltage 200V
Continuous Drain Current (ID) 15A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 160m Ω @ 7.5A, 10V
FET Type N-Channel
Power Dissipation 40W
Power Dissipation-Max 40W Tc
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2006
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

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