RDD022N60TL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V CPT
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 23
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 6A
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 53 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 25V
Vgs(th) (Max) @ Id 4.7V @ 1mA
Rds On (Max) @ Id, Vgs 6.7 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 20W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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