RD3T100CNTL1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NCH 200V 10A POWER MOSFET
PDF
/
Buying Options
Total Price: USD $2.12
Unit Price: USD $2.120024
≥1 USD $2.120024
≥10 USD $2.000021
≥100 USD $1.886808
≥500 USD $1.780007
≥1000 USD $1.679266
Inventory: 992
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 7.35 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 40A
Drain-source On Resistance-Max 0.182Ohm
Drain Current-Max (Abs) (ID) 10A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Rds On (Max) @ Id, Vgs 182m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 85W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
Recommended For You
RD3T100CNTL1+price,RD3T100CNTL1+datasheet,RD3T100CNTL1+in stock,buy+RD3T100CNTL1,finder+RD3T100CNTL1,RD3T100CNTL1+tutorials,RD3T100CNTL1+download