RD3S100CNTL1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NCH 190V 10A POWER MOSFET
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Buying Options
Total Price: USD $1.9
Unit Price: USD $1.9008
≥1 USD $1.9008
≥10 USD $1.57872
≥100 USD $1.256552
≥500 USD $1.063234
≥1000 USD $0.902132
Inventory: 935
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 85W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 182m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drain to Source Voltage (Vdss) 190V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 190V
Avalanche Energy Rating (Eas) 8.33 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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